optoswitch eesx1041 transmissive phototransistor output. stable sensing at temperatures as high as 95 c. general-purpose model with a 5-mm-wide slot. pcb mounting type. high resolution with a 0.5-mm-wide aperture. dimensions internal circuit k a c e t erminal no. name a anode k cathode c collector e emitter dimensions tolerance 3 mm max. 0.3 3 mm 6 0.375 6 mm 10 0.45 10 mm 18 0.55 18 mm 30 0.65 unless otherwise specified, the tolerances are as shown below . two, 0.7 0.1 dia. 0.2 max. 0.2 max. 5 min. optical axis two, 0.7 0.1 four, 0.25 four, 0.5 0.5 0.1 5.2 0.1 2.35 0.1 two, 2.54 14 0.2 6 0.2 specifications absolute maximum ratings (ta = 25 c) item symbol rated value emitter forward current i f 50 ma (see note 1) pulse forward current i fp 1 a (see note 2) reverse voltage v r 4 v detector collectoremitte r v oltage v ceo 30 v emittercollecto r v oltage v eco --- collector current i c 20 ma collector dissipation p c 100 mw (see note 1) ambient temperature operating topr 25 c to 95 c storage tstg 30 c to 100 c soldering tsol 260 c note: 1.refer to the temperature rating chart if the ambient temperature exceeds 25 c. 2.the pulse width is 10 m s maximum with a frequency of 100 hz.
electrical and optical characteristics (ta = 25 c) item symbol value condition emitter forward voltage v f 1.2 v typ., 1.5 v max. i f = 30 ma reverse current i r 0.01 m a typ., 10 m a max. v r = 4 v peak emission wavelength l p 940 nm typ. i f = 20 ma detector light current i l 0.5 ma min., 14 ma max. i f = 20 ma, v ce = 10 v dark current i d 2 na typ., 200 na max. v ce = 10 v , 0 x leakage current i leak --- --- collectoremitter saturated voltage v ce (sat) 0.1 v typ., 0.4 v max. i f = 20 ma, i l = 0.1 ma peak spectral sensitivity wavelength l p 850 nm typ. v ce = 10 v rising time tr 4 m s typ. v cc = 5 v , r l = 100 w , i l = 5 ma falling time tf 4 m s typ. v cc = 5 v , r l = 100 w , i l = 5 ma engineering data forward current vs. collector dissipation t emperature rating forward current vs. forward v oltage characteristics (t ypical) light current vs. forward current characteristics (t ypical) ambient temperature t a ( c) collector dissipation pc (mw) forward voltage v f (v) f forward current i (ma) f forward current i (ma) forward current i f (ma) light current i (ma) l light current vs. collectoremitter v oltage characteristics (t ypical) relative light current vs. ambient t emperature characteristics (t ypical) dark current vs. ambient t em- perature characteristics (t ypical) collectoremitter voltage v ce (v) light current i (ma) l ambient temperature t a ( c) ambient temperature t a ( c) response t ime vs. load resis - tance characteristics (t ypical) load resistance r l (k w ) distance d (mm) i f = 20 ma v ce = 5 v v ce = 10 v 0 x i f = 20 ma v ce = 10 v ta = 25 c vcc = 5 v ta = 25 c (center of optical axis) input output input output 90 % 10 % ta = 30 c ta = 25 c ta = 70 c ta = 25 c v ce = 10 v ta = 25 c i f = 50 ma i f = 20 ma i f = 10 ma i f = 40 ma i f = 30 ma response time tr , tf ( s) relative light current i (%) l dark current i (na) d m sensing position characteristics (typical) response t ime measurement circuit relative light current i (%) l i f p c
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